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 DSEC 30-12A
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x 15 A VRRM = 1200 V trr = 40 ns
TO-247 AD
VRSM V 1200
VRRM V 1200
Type
DSEC 30-12A
A
C
A
A C A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 125C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 9 A; L = 180 H VA = 1.25*VR typ.; f = 10 kHz; repetitive
Maximum Ratings 50 15 90 8.7 0.9 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Applications
q
Features
q q q q q q q
International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TC = 25C mounting torque typical
95 0.8...1.2 6
q q q
Symbol IR x
Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 15 A; TVJ = 150C TVJ = 25C
Characteristic Values typ. max. 100 0.5 1.78 2.74 1.6 0.25 mA mA V V K/W K/W ns A
q
VF y RthJC RthCH trr IRM
q q q
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms TVJ = 100C
40 4.5
Advantages
q
q
q
Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see outlines.pdf
(c) 2000 IXYS All rights reserved
1-2
008
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-12A
40 A 35 IF 30 25 20 15 10 5 0 0 1 2 3 VF V 4
TVJ=150C TVJ=100C TVJ= 25C
3.0 2.5 Qr 2.0 1.5 1.0 0.5
mC VR = 600V
TVJ= 100C
50
TVJ= 100C A VR = 600V
IRM
IF= 30A IF= 15A IF= 7.5A
40
30
20
IF= 30A IF= 15A IF= 7.5A
10
0.0 100
0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
180 ns
TVJ= 100C VR = 600V
Fig. 3 Peak reverse current IRM versus -diF/dt
120 V VFR 80
TVJ= 100C IF = 15A VFR tfr
2.0
1.2 s tfr 0.8
1.5 Kf 1.0
I RM
trr
160
IF= 30A IF= 15A IF= 7.5A
140
40 0.5
Qr
0.4
120
0.0 0 40 80 120 C 160 TVJ
100 0 200 400 600 -diF/dt 800 A/ms 1000
0 0 200 400
0.0 600 A/ms 1000 800 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
10 K/W 1 ZthJC 0.1
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.08512 0.3277 0.4211 ti (s) 0.0052 0.0003 0.0409
0.01
0.001 0.00001
DSEC 30-12A
0.0001
0.001
0.01
0.1 t
s
1
Fig. 7 Transient thermal resistance junction to case
008
NOTE: Fig. 2 to Fig. 6 shows typical values
(c) 2000 IXYS All rights reserved
2-2


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